amplifiers - smt 5 5 - 42 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com designers kit available hmc311st89 / 311ST89E ingap hbt gain block mmic amplifier, dc - 6.0 ghz v01.0505 general description features functional diagram the hmc311st89 & hmc311ST89E are gaas ingap heterojunction bipolar transistor (hbt) gain block mmic smt dc to 6 ghz ampli ers. packaged in an industry standard sot89, the ampli er can be used as either a cascadable 50 ohm gain stage or to drive the lo of hmc mixers with up to +16.5 dbm output power. the hmc311st89 & hmc311ST89E offer 16 db of gain and an output ip3 of +31.5 dbm while requiring only 54 ma from a +5v supply. the darlington feedback pair used results in reduced sensitivity to normal process variations and yields excellent gain stability over temperature while requiring a minimal number of external bias components. p1db output power: +15.5 dbm output ip3: +31.5 dbm gain: 16 db 50 ohm i/os industry standard sot89 package included in the hmc-dk001 designers kit typical applications the hmc311st89 / hmc311ST89E is an ideal rf/if gain block or lo buffer ampli er for: ? cellular / pcs / 3g ? fixed wireless & wlan ? catv & cable modem ? microwave radio electrical specifications, vs= 5.0 v, rbias= 22 ohm, t a = +25 c parameter min. typ. max. units gain dc - 1.0 ghz 1.0 - 4.0 ghz 4.0 - 6.0 ghz 14.0 13.0 12.5 16.0 15.0 14.5 db db db gain variation over temperature dc - 2.0 ghz 2.0 - 4.0 ghz 4.0 - 6.0 ghz 0.004 0.007 0.012 0.007 0.012 0.016 db/ c db/ c db/ c return loss input / output dc - 2.0 ghz 2.0 - 5.0 ghz 5.0 - 6.0 ghz 8 7 8 db db db reverse isolation dc - 6.0 ghz 20 db output power for 1 db compression (p1db) dc - 2.0 ghz 2.0 - 4.0 ghz 4.0 - 6.0 ghz 13.5 12.0 10.0 15.5 15.0 13.0 dbm dbm dbm output third order intercept (ip3) dc - 1.0 ghz 1.0 - 2.0 ghz 2.0 - 4.0 ghz 4.0 - 6.0 ghz 31.5 30 27 24 dbm dbm dbm dbm noise figure dc - 4.0 ghz 4.0 - 6.0 ghz 4.5 5 db supply current (icq) 54 ma note: data taken with broadband bias tee on device output.
amplifiers - smt 5 5 - 43 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com hmc311st89 / 311ST89E output return loss vs. temperature broadband gain & return loss gain vs. temperature reverse isolation vs. temperature input return loss vs. temperature noise figure vs. temperature -20 -15 -10 -5 0 5 10 15 20 123456789 s21 s11 s22 response (db) frequency (ghz) 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 012345678 +25 c +85 c -40 c gain (db) frequency (ghz) -20 -15 -10 -5 0 012345678 +25 c +85 c -40 c input return loss (db) frequency (ghz) -20 -15 -10 -5 0 012345678 +25 c +85 c -40 c output return loss (db) frequency (ghz) -25 -20 -15 -10 -5 0 012345678 +25 c +85 c -40 c reverse isolation (db) frequency (ghz) 0 1 2 3 4 5 6 7 8 9 10 12345678 +25 c +85 c -40 c noise figure (db) frequency (ghz) ingap hbt gain block mmic amplifier, dc - 6.0 ghz v01.0505
amplifiers - smt 5 5 - 44 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com power compression @ 6 ghz p1db vs. temperature psat vs. temperature output ip3 vs. temperature power compression @ 1 ghz gain, power, oip3 & supply current vs. supply voltage @ 1 ghz 4 6 8 10 12 14 16 18 012345678 +25 c +85 c -40 c p1db (dbm) frequency (ghz) 4 6 8 10 12 14 16 18 012345678 +25 c +85 c -40 c psat (dbm) frequency (ghz) -4 -2 0 2 4 6 8 10 12 14 16 18 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) -4 -2 0 2 4 6 8 10 12 14 16 18 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) 10 12 14 16 18 20 22 24 26 28 30 32 34 012345678 +25 c +85 c -40 c oip3 (dbm) frequency (ghz) 5 10 15 20 25 30 35 40 10 20 30 40 50 60 70 80 4.5 4.75 5 5.25 5.5 gain p1db psat oip3 icq gain (db), p1db (dbm), psat (dbm), oip3 (dbm) icq (ma) vs (vdc) hmc311st89 / 311ST89E ingap hbt gain block mmic amplifier, dc - 6.0 ghz v01.0505
amplifiers - smt 5 5 - 45 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com outline drawing absolute maximum ratings collector bias voltage (vcc) +7 volts rf input power (rfin)(vcc = +3.9 vdc) +10 dbm junction temperature 150 c continuous pdiss (t = 85 c) (derate 5.21 mw/c above 85 c) 0.34 w thermal resistance (junction to lead) 191 c/w storage temperature -65 to +150 c operating temperature -40 to +85 c hmc311st89 / 311ST89E ingap hbt gain block mmic amplifier, dc - 6.0 ghz v01.0505 part number package body material lead finish msl rating package marking [3] hmc311st89 low stress injection molded plastic sn/pb solder msl1 [1] h311 xxxx hmc311ST89E rohs-compliant low stress injection molded plastic 100% matte sn msl1 [2] h311 xxxx [1] max peak re ow temperature of 235 c [2] max peak re ow temperature of 260 c [3] 4-digit lot number xxxx package information notes: 1. leadframe material: copper alloy 2. dimensions are in inches [millimeters]. 3. dimension does not include moldflash of 0.15mm per side. 4. dimension does not include moldflash of 0.25mm per side. 5. all ground leads must be soldered to pcb rf ground. electrostatic sensitive device observe handling precautions
amplifiers - smt 5 5 - 46 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application circuit pin descriptions pin number function description interface schematic 1rfin this pin is dc coupled. an off chip dc blocking capacitor is required. 3rfout rf output and dc bias for the output stage. 2, 4 gnd these pins and package bottom must be connected to rf/dc ground. recommended component values component frequency (mhz) 50 900 1900 2200 2400 3500 5200 5800 l1 270 nh 56 nh 18 nh 18 nh 15 nh 8.2 nh 3.3 nh 3.3 nh c1, c2 0.01 f 100 pf 100 pf 100 pf 100 pf 100 pf 100 pf 100 pf note: 1. select rbias to achieve icq using equation below, rbias > 22 ohm. 2. external blocking capacitors are required on rfin and rfout. icq = vs - 3.9 rbias hmc311st89 / 311ST89E ingap hbt gain block mmic amplifier, dc - 6.0 ghz v01.0505
amplifiers - smt 5 5 - 47 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com evaluation pcb the circuit board used in the nal application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. a suf cient number of via holes should be used to connect the top and bottom ground planes. the evaluation board should be mounted to an appropriate heat sink. the evaluation circuit board shown is available from hittite upon request. list of materials for evaluation pcb 108313 [1] item description j1 - j2 pcb mount sma connector j3 - j4 dc pin c1, c2 capacitor, 0402 pkg. c3 100 pf capacitor, 0402 pkg. c4 1000 pf capacitor, 0603 pkg. c5 2.2 f capacitor, tantalum r1 resistor, 0805 pkg. l1 inductor, 0603 pkg. u1 hmc311st89 / hmc311ST89E pcb [2] 107368 evaluation pcb [1] reference this number when ordering complete evaluation pcb [2] circuit board material: rogers 4350 hmc311st89 / 311ST89E ingap hbt gain block mmic amplifier, dc - 6.0 ghz v01.0505
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